个人简介

曾波文，男，1991年出生。2019年博士毕业于中南大学。2023年于湖南大学博士后出站，并在此期间于美国科罗拉多大学博尔德分校交流访问一年半。现发表学术论文多篇，代表性论文成果有Phys. Rev. B，Phys. Rev. Res.，Appl. Phys. Lett.；以通讯作者在非厄米自旋物理领域发表Physics Reports（IF=29.9） 86页长篇综述。欢迎对非厄米物理理论感兴趣的研究生加入。

主要研究领域

非厄米拓扑，非厄米动力学相关现象和理论。二维材料声子流体动力学的调控。

教学情况  

本科生课程：大学物理。研究生课程：固体理论

科研项目  

主持国家自然科学基金青年基金项目一项，湖南省自然科学基金青年基金项目一项。

代表性论文

1.Z. H. Yang, K. L. Zhou, B. W. Zeng* (corresponding author), and Y. Hu*, “Inverse design of winding tuple for non-Hermitian topological edge modes”, Phys. Rev. B 111, L041406 (2025).

2.K. L. Zhou, J. Zhao, B. W. Zeng* (corresponding author), and Y. Hu*, “Abnormal frequency response determined by saddle points in non-Hermitian crystals”, Phys. Rev. B 110, L140302 (2024).

3.Yu, T (corresponding author), Zou, J., B. W. Zeng* (corresponding author), Rao, J. W., and Xia, K. “Non-Hermitian topological magnonics.” Physics Reports, 1062, 1-86 (2024).

4.B. W. Zeng and T. Yu*. “Radiation-free and non-Hermitian topology inertial defect states of on-chip magnons.” Physical Review Research 5, 013003 (2023).

5.B. W. Zeng, Z. K. Ding, H. Pan, N. Luo, J. Zeng, L. M. Tang and K. Q. Chen*. “Strong strain dependent phonon hydrodynamic in bilayer graphene.” Applied Physical Letters, 121, 252202 (2022).

6.W. H. Xiao, B. W. Zeng*(corresponding author), Z. K. Ding, H. Pan, W. W. Liu, N. Luo, J. Zeng, K. Q. Chen* and L. M. Tang*. “Exceptionally high mobilities in monolayer group-IV monochalcogenides GeTe and SnTe.” Applied Physics Letters 123, 013101 (2023).

7.B. W. Zeng., M. Q. Long*, Y. L. Dong, J. Xiao, S. D. Zhang, Y. G. Yi, Y. L. Gao, “Stress-sign-tunable Poisson’s ratio in monolayer blue phosphorus oxide”, J. Phys.: Condens. Matter, 31, 295702 (2019).

8.B. W. Zeng, Y. Dong, Y. Yi, D. Li, S. Zhang, and M. Q. Long*. “Electronic structure, carrier mobility and strain Modulation of CH (SiH, GeH) nanoribbons.” J. Phys.: Condens. Matter, 31, 165502 (2019).

9.B. W. Zeng, M. Q. Long*, X. J. Zhang, Y. Dong, M. J. Li, Y. Yi and H. M. Duan. “Strain engineering on electronic structure and carrier mobility in monolayer GeP3.” J. Phys. D: Appl. Phys. 51, 235302, (2018).

10.B. W. Zeng, M. J. Li, X. J. Zhang, Y. G. Yi, L. P. Fu and M. Q. Long*. “First-principles prediction of the electronic structure and carrier mobility in hexagonal boron phosphide sheet and nanoribbons.” J. Phys. Chem. C 2016, 120, 25037, (2016).

联系方式 zengbowen@csust.edu.cn